STMicroelectronics - ST13005F

  1. Home
  2. STMicroelectronics - ST13005F
ST13005F by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number ST13005F
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Terminal Position: SINGLE;
Datasheet ST13005F Datasheet
In Stock1,102
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 8
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,102 - -

Popular Products

Category Top Products

TIP117 by Samsung

TIP117

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
TIP117 by Baneasa S A

TIP117

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
TIP35C by Motorola

TIP35C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Body Material: PLASTIC/EPOXY;
TIP29C by New Jersey Semiconductor Products

TIP29C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V;
TIP142T by Central Semiconductor

TIP142T

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;
JAN2N3055 by Microsemi

JAN2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING; Minimum DC Current Gain (hFE): 20;
TIP142 by Texas Instruments

TIP142

Texas Instruments

TIP142 by Texas Instruments is a NPN power BJT with 125W max power dissipation, 10A max collector current, and 150°C max operating temp. Ideal for high-power applications like motor control and industrial automation due to its Darlington configuration with built-in resistor.
TIP32C by Central Semiconductor

TIP32C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP147T by Baneasa S A

TIP147T

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;
BDW93C by Mospec Semiconductor

BDW93C

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 100;
TIP32C by Baneasa S A

TIP32C

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE; Transistor Element Material: SILICON;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
BD140 by Kec

BD140

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP50 by Texas Instruments

TIP50

Texas Instruments

TIP50 by Texas Instruments is a NPN BJT transistor with 400V VCE, 1A IC, and 40W Ptot. Ideal for power applications in electronics due to its high voltage and current ratings. Its single configuration and through-hole terminals make it easy to integrate into various circuit designs.
TIP112 by Baneasa S A

TIP112

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
D44H-8 by Loras Industries

D44H-8

Loras Industries

D44H-8 by Loras Industries is a NPN Power BJT with 50W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for applications requiring high power amplification in through-hole mounting configurations.
TIP125 by Micro Commercial Components

TIP125

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE;
BCP56-16 by Secos

BCP56-16

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
TIP110 by Onsemi

TIP110

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
TIP42A by Motorola

TIP42A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;