ST14C02C by STMicroelectronics | Memory ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	ST14C02C
Description	EEPROM; No. of Terminals: 6; Package Code: DIE; Package Shape: UNSPECIFIED; No. of Words Code: 256; Nominal Supply Voltage / Vsup (V): 5;
Datasheet	ST14C02C Datasheet
In Stock	4,489

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	256X8
Output Characteristics:	OPEN-DRAIN
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	YES
No. of Terminals:	6
No. of Words:	256 words
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Technology:	CMOS
JESD-30 Code:	X-XUUC-N6
Package Shape:	UNSPECIFIED
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Package Code:	DIE
Memory Density:	2048 bit
Memory IC Type:	EEPROM
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
No. of Words Code:	256
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	SERIAL
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,489	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;