ST6G3238ETBR by STMicroelectronics | Interface ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	ST6G3238ETBR
Description	INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: BALL; No. of Terminals: 25; Package Code: TFBGA; Package Shape: SQUARE;
Datasheet	ST6G3238ETBR Datasheet
In Stock	1,143

NAME	DESCRIPTION
Minimum Supply Voltage:	1.4 V
Package Body Material:	UNSPECIFIED
Nominal Supply Voltage:	3 V
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.16 mm
Surface Mount:	YES
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	25
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-XBGA-B25
Package Shape:	SQUARE
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	TFBGA
Interface IC Type:	INTERFACE CIRCUIT
Width:	3 mm
Moisture Sensitivity Level (MSL):	3
Maximum Supply Voltage:	3.6 V
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Length:	3 mm
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,143	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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