STA8090G by STMicroelectronics | Telecommunications

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STA8090G
Description	TELECOM CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 56; Package Code: HVQCCN; Package Shape: SQUARE;
Datasheet	STA8090G Datasheet
In Stock	2,742

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Nominal Supply Voltage:	1.2 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Telecom IC Type:	TELECOM CIRCUIT
Maximum Seated Height:	.9 mm
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
No. of Terminals:	56
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Length:	8 mm
Technology:	CMOS
JESD-30 Code:	S-XQCC-N56
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Package Code:	HVQCCN
Width:	8 mm
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,742	-	-

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

CONNECTOR ACCESSORY; Associated Backshell Military - Specifications: MIL-DTL-38999; Material: COPPER ALLOY; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: FEMALE; DIN Conformity: NO;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;