STMicroelectronics - STB141NF55-1

STB141NF55-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB141NF55-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;
Datasheet STB141NF55-1 Datasheet
In Stock1,734
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .008 ohm
Avalanche Energy Rating (EAS): 1300 mJ
Maximum Feedback Capacitance (Crss): 290 pF
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 80 A
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