STMicroelectronics - STB18N20-1

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STB18N20-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB18N20-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY;
Datasheet STB18N20-1 Datasheet
In Stock3,670
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 135 ns
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 72 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .18 ohm
Avalanche Energy Rating (EAS): 50 mJ
Maximum Feedback Capacitance (Crss): 70 pF
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 18 A
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