STMicroelectronics - STB34NM60ND

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STB34NM60ND by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB34NM60ND
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STB34NM60ND Datasheet
In Stock1,128
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 29 A
Maximum Pulsed Drain Current (IDM): 116 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 2
Maximum Power Dissipation (Abs): 190 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .11 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 345 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Additional Features: ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 29 A
Peak Reflow Temperature (C): 245
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