STMicroelectronics - STD13NM60ND

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STD13NM60ND by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD13NM60ND
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 44 A; Terminal Position: SINGLE; Maximum Operating Temperature: 150 Cel;
Datasheet STD13NM60ND Datasheet
In Stock2,775
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .38 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 162 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Peak Reflow Temperature (C): 260
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