STMicroelectronics - STD150NH02L

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STD150NH02L by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD150NH02L
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STD150NH02L Datasheet
In Stock4,666
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 150 A
Maximum Pulsed Drain Current (IDM): 600 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0038 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 150 A
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