STD35NF06T4 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STD35NF06T4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet	STD35NF06T4 Datasheet
In Stock	3,437

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	35 A
Maximum Pulsed Drain Current (IDM):	140 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	2
Maximum Power Dissipation (Abs):	80 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.02 ohm
Avalanche Energy Rating (EAS):	130 mJ
Other Names:	497-3159-2-NDR 497-STD35NF06T4TR 497-3159-6-ND -1138-STD35NF06T4CT 497-STD35NF06T4DKR 497-3159-2 -1138-STD35NF06T4TR 497-3159-1 497-3159-2-ND 497-3159-1-ND 497-3159-1-NDR 497-3159-6 497-STD35NF06T4CT -1138-STD35NF06T4DKR
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	35 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,437	$0.215	$738.955

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