STMicroelectronics - STD4NS25-1

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STD4NS25-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD4NS25-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 250 V; Transistor Application: SWITCHING; JESD-30 Code: R-PSIP-T3;
Datasheet STD4NS25-1 Datasheet
In Stock935
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 120 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
JEDEC-95 Code: TO-251
Maximum Pulsed Drain Current (IDM): 16 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.1 ohm
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