STE36N50-DK by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STE36N50-DK
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 144 A; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 500 V;
Datasheet	STE36N50-DK Datasheet
In Stock	1,440

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	100 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	36 A
Maximum Pulsed Drain Current (IDM):	144 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	4
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Reference Standard:	UL RECOGNIZED
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.14 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,440	-	-

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