
Image shown is a representation only.
Manufacturer | STMicroelectronics |
---|---|
Manufacturer's Part Number | STE45N50 |
Description | Power Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Drain Current (Abs) (ID): 45 A; No. of Elements: 1; |
Datasheet | STE45N50 Datasheet |
In Stock | 2,192 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 45 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
No. of Terminals: | 4 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 450 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PUFM-X4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 45 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .11 ohm |