STMicroelectronics - STE45N50

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STE45N50 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STE45N50
Description Power Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Drain Current (Abs) (ID): 45 A; No. of Elements: 1;
Datasheet STE45N50 Datasheet
In Stock2,192
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 45 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 450 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 45 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .11 ohm
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