STMicroelectronics - STE53NA50

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STE53NA50 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STE53NA50
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Terminal Form: UNSPECIFIED; JESD-30 Code: R-PUFM-X4;
Datasheet STE53NA50 Datasheet
In Stock4,407
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 210 ns
Maximum Drain Current (ID): 53 A
Maximum Pulsed Drain Current (IDM): 212 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 460 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 460 W
Maximum Drain-Source On Resistance: .085 ohm
Avalanche Energy Rating (EAS): 1014 mJ
Maximum Feedback Capacitance (Crss): 650 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Reference Standard: UL RECOGNIZED
Maximum Drain Current (Abs) (ID): 53 A
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