STMicroelectronics - STF11N65M5

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STF11N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STF11N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Avalanche Energy Rating (EAS): 130 mJ; Minimum DS Breakdown Voltage: 650 V;
Datasheet STF11N65M5 Datasheet
In Stock4,732
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .48 ohm
Avalanche Energy Rating (EAS): 130 mJ
Other Names: -1138-STF11N65M5
497-13160
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
4,732 $0.318 $1,504.776

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