STMicroelectronics - STF6N60M2

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STF6N60M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STF6N60M2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Feedback Capacitance (Crss): .7 pF; Maximum Drain Current (ID): 4.5 A;
Datasheet STF6N60M2 Datasheet
In Stock4,055
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 20 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 1.2 ohm
Avalanche Energy Rating (EAS): 86 mJ
Maximum Feedback Capacitance (Crss): .7 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
4,055 $0.483 $1,958.565

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