STMicroelectronics - STFILED624

STFILED624 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STFILED624
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 4 A;
Datasheet STFILED624 Datasheet
In Stock1,324
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 100 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4 A
JEDEC-95 Code: TO-281
Maximum Pulsed Drain Current (IDM): 14 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 620 V
Maximum Power Dissipation (Abs): 20 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 4 A
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 2.5 ohm
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