STMicroelectronics - STFW3N170

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STFW3N170 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STFW3N170
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 2.6 A;
Datasheet STFW3N170 Datasheet
In Stock757
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.6 A
Maximum Pulsed Drain Current (IDM): 10.4 A
Sub-Category: FET General Purpose Powers
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 13 ohm
Avalanche Energy Rating (EAS): 2 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 1700 V
Maximum Drain Current (Abs) (ID): 2.3 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
757 $2.900 $2,195.300

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