STMicroelectronics - STGB15M65DF2

STGB15M65DF2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB15M65DF2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Collector Current (IC): 30 A; Case Connection: COLLECTOR;
Datasheet STGB15M65DF2 Datasheet
In Stock3,234
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 30 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Surface Mount: YES
Nominal Turn Off Time (toff): 265 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 136 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 34 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2 V
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Pricing (USD)

Qty. Unit Price Ext. Price
3,234 $0.857 $2,771.538

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