STGB19N40LZ by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGB19N40LZ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; No. of Elements: 1;
Datasheet	STGB19N40LZ Datasheet
In Stock	2,113

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	25 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	2.6 V
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	22200 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	4450 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	425 V
Additional Features:	BULK: 1000
Maximum Gate-Emitter Voltage:	16 V
Peak Reflow Temperature (C):	245
Maximum VCEsat:	1.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,113	-	-

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