STMicroelectronics - STGB20H65DFB2

STGB20H65DFB2 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGB20H65DFB2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 147 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 2;
Datasheet STGB20H65DFB2 Datasheet
In Stock790
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Surface Mount: YES
Nominal Turn Off Time (toff): 178 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 147 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 26 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
790 $0.870 $687.300

Popular Products

Category Top Products