STMicroelectronics - STGB35N35LZ

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STGB35N35LZ by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB35N35LZ
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 176 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 2.3 V; Peak Reflow Temperature (C): 245;
Datasheet STGB35N35LZ Datasheet
In Stock4,590
NAME DESCRIPTION
Maximum Collector Current (IC): 40 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Gate-Emitter Threshold Voltage: 2.3 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 176 W
Maximum Collector-Emitter Voltage: 320 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 12 V
Peak Reflow Temperature (C): 245
Moisture Sensitivity Level (MSL): 1
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