STGW30NC120HD by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGW30NC120HD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 60 A; No. of Elements: 1;
Datasheet	STGW30NC120HD Datasheet
In Stock	1,053

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	60 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.75 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN
Nominal Turn Off Time (toff):	928 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	170 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	41 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,053	-	-

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;