STGW80H65FB-4 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGW80H65FB-4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum VCEsat: 2 V;
Datasheet	STGW80H65FB-4 Datasheet
In Stock	2,210

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	120 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	7 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	448 ns
No. of Terminals:	4
Maximum Power Dissipation (Abs):	469 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	104 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	650 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,210	-	-

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