STMicroelectronics - STH240N75F3-6

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STH240N75F3-6 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH240N75F3-6
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 180 A; Avalanche Energy Rating (EAS): 600 mJ;
Datasheet STH240N75F3-6 Datasheet
In Stock682
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 720 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .003 ohm
Avalanche Energy Rating (EAS): 600 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 75 V
Maximum Drain Current (Abs) (ID): 180 A
Peak Reflow Temperature (C): NOT SPECIFIED
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