STMicroelectronics - STH5N90FI

STH5N90FI by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH5N90FI
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; JESD-30 Code: R-PSFM-T3; Maximum Turn On Time (ton): 170 ns;
Datasheet STH5N90FI Datasheet
In Stock4,155
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 170 ns
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 20 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 60 W
Maximum Drain-Source On Resistance: 2.4 ohm
Avalanche Energy Rating (EAS): 300 mJ
Maximum Feedback Capacitance (Crss): 85 pF
JEDEC-95 Code: TO-218
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.5 A
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