STMicroelectronics - STH60N05

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STH60N05 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH60N05
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 350 pF; Maximum Drain Current (ID): 60 A;
Datasheet STH60N05 Datasheet
In Stock1,675
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 590 ns
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 240 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Power Dissipation Ambient: 180 W
Maximum Drain-Source On Resistance: .023 ohm
Avalanche Energy Rating (EAS): 700 mJ
Maximum Feedback Capacitance (Crss): 350 pF
JEDEC-95 Code: TO-218
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
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