STMicroelectronics - STH6N95K5-2

STH6N95K5-2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH6N95K5-2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
Datasheet STH6N95K5-2 Datasheet
In Stock3,906
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.25 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 90 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 950 V
Peak Reflow Temperature (C): 245
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