STMicroelectronics - STH7NA60FI

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STH7NA60FI by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH7NA60FI
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; No. of Elements: 1; Maximum Drain Current (ID): 4.6 A;
Datasheet STH7NA60FI Datasheet
In Stock871
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 260 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.6 A
Maximum Pulsed Drain Current (IDM): 29 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 1.2 ohm
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