STMicroelectronics - STK130N4LF7AG

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STK130N4LF7AG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STK130N4LF7AG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
Datasheet STK130N4LF7AG Datasheet
In Stock4,572
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 105 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .006 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 250 mJ
Other Names: 497-STK130N4LF7AGTR
497-STK130N4LF7AGDKR
497-STK130N4LF7AGCT
Maximum Feedback Capacitance (Crss): 33 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
4,572 $0.398 $1,819.656

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