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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STK9N10(SOT-194) |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 30 mJ; |
| Datasheet | STK9N10(SOT-194) Datasheet |
| In Stock | 50 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 115 ns |
| Maximum Drain Current (ID): | 9 A |
| Maximum Pulsed Drain Current (IDM): | 36 A |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 50 W |
| Maximum Drain-Source On Resistance: | .3 ohm |
| Avalanche Energy Rating (EAS): | 30 mJ |
| Maximum Feedback Capacitance (Crss): | 100 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |









