STMicroelectronics - STK9N10(SOT-194)

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STK9N10(SOT-194) by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STK9N10(SOT-194)
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 30 mJ;
Datasheet STK9N10(SOT-194) Datasheet
In Stock50
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 115 ns
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Surface Mount: YES
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 50 W
Maximum Drain-Source On Resistance: .3 ohm
Avalanche Energy Rating (EAS): 30 mJ
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
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