STMicroelectronics - STL12P6F6

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STL12P6F6 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL12P6F6
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Package Shape: SQUARE; Maximum Pulsed Drain Current (IDM): 48 A;
Datasheet STL12P6F6 Datasheet
In Stock3,595
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 75 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .16 ohm
Maximum Feedback Capacitance (Crss): 20 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: BULK; 3000
Peak Reflow Temperature (C): NOT SPECIFIED
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