STL26NM60N by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL26NM60N
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 10.8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE;
Datasheet	STL26NM60N Datasheet
In Stock	2,261

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	400 mJ
Other Names:	497-11207-2-ND 497-11207-1-ND 497-STL26NM60NCT 497-11207-6 497-STL26NM60NTR 497-STL26NM60NDKR 497-11207-2 497-11207-1 497-11207-6-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.7 A
Maximum Pulsed Drain Current (IDM):	10.8 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.185 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,261	-	-

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