STMicroelectronics - STL40DN3LLH5

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STL40DN3LLH5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL40DN3LLH5
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Minimum DS Breakdown Voltage: 30 V; Terminal Form: FLAT;
Datasheet STL40DN3LLH5 Datasheet
In Stock5,256
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 60 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): NOT SPECIFIED
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