STMicroelectronics - STL5NK65Z

STL5NK65Z by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL5NK65Z
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-30 Code: S-XQCC-N5; Transistor Application: SWITCHING;
Datasheet STL5NK65Z Datasheet
In Stock1,924
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .76 A
Maximum Pulsed Drain Current (IDM): 3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 75 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XQCC-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.8 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 190 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 5 A
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Pricing (USD)

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