STMicroelectronics - STL8N10LF3

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STL8N10LF3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL8N10LF3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; No. of Elements: 1; Terminal Form: FLAT;
Datasheet STL8N10LF3 Datasheet
In Stock31,189
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 31.2 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 70 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .05 ohm
Avalanche Energy Rating (EAS): 190 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 20 A
Peak Reflow Temperature (C): NOT SPECIFIED
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