STMicroelectronics - STL9N65M2

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STL9N65M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL9N65M2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 12;
Datasheet STL9N65M2 Datasheet
In Stock1,182
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 95 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 12
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 46 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XQCC-N12
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 4.5 A
Maximum Drain-Source On Resistance: 1 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
1,182 $0.533 $630.006

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