STM32F215RGT6TR by STMicroelectronics | Peripheral ICs

Image shown is a representation only.

Manufacturer	STMicroelectronics
Manufacturer's Part Number	STM32F215RGT6TR
Description	MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: LFQFP; Package Shape: SQUARE;
Datasheet	STM32F215RGT6TR Datasheet
In Stock	1,012

NAME	DESCRIPTION
Minimum Supply Voltage:	1.8 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	3.3 V
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.6 mm
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
ADC Channels:	YES
No. of Terminals:	64
DMA Channels:	YES
Terminal Position:	QUAD
Format:	FIXED POINT
Package Style (Meter):	FLATPACK, LOW PROFILE, FINE PITCH
No. of DMA Channels:	2
No. of I/O Lines:	51
Address Bus Width:	0
Technology:	CMOS
JESD-30 Code:	S-PQFP-G64
Maximum Clock Frequency:	26 MHz
Package Shape:	SQUARE
ROM Words:	1048576
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	LFQFP
Width:	10 mm
Moisture Sensitivity Level (MSL):	3
Speed:	120 rpm
Peripheral IC Type:	MICROCONTROLLER, RISC
Maximum Supply Voltage:	3.6 V
No. of External Interrupts:	16
RAM Bytes:	135168
Low Power Mode:	YES
Boundary Scan:	YES
External Data Bus Width:	0
Bit Size:	32
DAC Channels:	YES
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Package Equivalence Code:	QFP64,.47SQ,20
Length:	10 mm
PWM Channels:	YES
On Chip Program ROM Width:	8
Peak Reflow Temperature (C):	260
ROM Programmability:	FLASH
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL
CPU Family:	CORTEX-M3

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,012	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;