STN1NB80 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STN1NB80
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.9 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
Datasheet	STN1NB80 Datasheet
In Stock	3,636

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Maximum Pulsed Drain Current (IDM):	.8 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2.9 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	20 ohm
Avalanche Energy Rating (EAS):	200 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	.2 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,636	-	-

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