STMicroelectronics - STP40N60M2

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STP40N60M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP40N60M2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 136 A;
Datasheet STP40N60M2 Datasheet
In Stock1,504
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 500 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 34 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 136 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .088 ohm
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