STP5N80XI by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STP5N80XI
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Pulsed Drain Current (IDM): 10.4 A; Terminal Position: SINGLE;
Datasheet	STP5N80XI Datasheet
In Stock	4,847

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	170 ns
Maximum Drain Current (ID):	2.6 A
Maximum Pulsed Drain Current (IDM):	10.4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	35 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	35 W
Maximum Drain-Source On Resistance:	2.4 ohm
Avalanche Energy Rating (EAS):	270 mJ
Maximum Feedback Capacitance (Crss):	85 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2.6 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,847	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;

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