STPS3L60U-Y by STMicroelectronics | Diodes

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STPS3L60U-Y
Description	RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	STPS3L60U-Y Datasheet
In Stock	170,704

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Forward Voltage (VF):	.79 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Surface Mount:	YES
Maximum Reverse Current:	150 uA
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-C2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Maximum Operating Temperature:	150 Cel
Other Names:	497-13846-2-ND 497-13846-1-ND 497-STPS3L60UYTR 497-13846-1 497-13846-2 497-STPS3L60UYCT
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	60 V
Minimum Operating Temperature:	-40 Cel
Maximum Non Repetitive Peak Forward Current:	100 A
Diode Element Material:	SILICON
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Application:	POWER

Pricing (USD)

Qty.	Unit Price	Ext. Price
170,704	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;