STMicroelectronics - STRH40N25FSY1

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STRH40N25FSY1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STRH40N25FSY1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; Maximum Operating Temperature: 150 Cel; Package Shape: SQUARE;
Datasheet STRH40N25FSY1 Datasheet
In Stock3,147
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 36 A
Maximum Pulsed Drain Current (IDM): 144 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 278 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-XSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .1 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 320 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
Maximum Drain Current (Abs) (ID): 36 A
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