STRH40N6SY2 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STRH40N6SY2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Drain Current (ID): 40 A; Additional Features: HIGH RELIABILITY, AVALANCHE RATED;
Datasheet	STRH40N6SY2 Datasheet
In Stock	1,534

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	160 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	90 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Avalanche Energy Rating (EAS):	512 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY, AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	40 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,534	-	-

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