STRH60N20FSY3 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STRH60N20FSY3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; JEDEC-95 Code: TO-254AA; Avalanche Energy Rating (EAS): 360 mJ;
Datasheet	STRH60N20FSY3 Datasheet
In Stock	1,902

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	53 A
Maximum Pulsed Drain Current (IDM):	160 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	312 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	360 mJ
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY, AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	53 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,902	-	-

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