STS3C2F80 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STS3C2F80
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
Datasheet	STS3C2F80 Datasheet
In Stock	442

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.08 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	80 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
442	-	-

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