STS5N15M3 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STS5N15M3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
Datasheet	STS5N15M3 Datasheet
In Stock	1,412

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	18 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	5 A
Maximum Drain-Source On Resistance:	.057 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,412	-	-

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