STU65N3LLH5 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STU65N3LLH5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
Datasheet	STU65N3LLH5 Datasheet
In Stock	1,867

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	65 A
Maximum Pulsed Drain Current (IDM):	260 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	50 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0097 ohm
Other Names:	-497-13446 497-13446
JEDEC-95 Code:	TO-251
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Additional Features:	ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	65 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,867	$1.320	$2,464.440

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