STVHD90FI by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STVHD90FI
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Turn On Time (ton): 520 ns; Maximum Pulsed Drain Current (IDM): 208 A;
Datasheet	STVHD90FI Datasheet
In Stock	4,622

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	520 ns
Maximum Drain Current (ID):	29 A
Maximum Pulsed Drain Current (IDM):	208 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	40 W
Maximum Drain-Source On Resistance:	.023 ohm
Avalanche Energy Rating (EAS):	500 mJ
Maximum Feedback Capacitance (Crss):	350 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,622	-	-

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