STW10N95K5 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STW10N95K5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 32 A; Maximum Drain-Source On Resistance: .8 ohm;
Datasheet	STW10N95K5 Datasheet
In Stock	858

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	122 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
JEDEC-95 Code:	TO-247
Maximum Pulsed Drain Current (IDM):	32 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	950 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.8 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
858	-	-

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BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;